Datasheet4U Logo Datasheet4U.com

2SK3510 - MOS Field Effect Transistor

Features

  • Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) Low Ciss: Ciss = 8500 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3510 N-Channel Power MOSFET Renesas
2SK351 N-Channel MOSFET Transistor Inchange Semiconductor
2SK351 Silicon N-Channel MOSFET Hitachi
2SK3511 MOSFET Renesas
2SK3512-01L N-Channel MOSFET Fuji Electric

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3511 MOSFET
2SK3503 N-Channel MOSFET
2SK3560 Silicon N-channel power MOSFET
2SK3572 MOS Field Effect Transistor
2SK3573 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET MOS Field Effect Transistor 2SK3510 Features Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) Low Ciss: Ciss = 8500 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 Rating Unit 75 V 20 V 83 A 332 A 125 W 1.
Published: |