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2SK3638 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power.

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SMD Type MOSFICET MOS Field Effect Transistor 2SK3638 Features Low on-state resistance RDS(on)1 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Symbol Rating Unit VDSS 20 V VGSS 20 V ID 64 A Idp * 220 A 36 PD W 1.