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2SK3640 - MOS Field Effect Transistor

Key Features

  • 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (N.

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📁 Similar Datasheet

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Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3641 MOS Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors IC 100V N-Channel PowerTrench MOSFET KDD3670 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3.