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2SK3641 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance RDS(on)1 =14 m RDS(on)2 =25 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 +0.15 1.50-0.15 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss: Ciss = 930 pF TYP. +0.15 0.50-0.15 MAX. (VGS = 4.5 V, ID = 15 A) 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperatur.

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SMD Type IC MOSFET MOS Field Effect Transistor 2SK3641 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Low on-state resistance RDS(on)1 =14 m RDS(on)2 =25 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 +0.15 1.50-0.15 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss: Ciss = 930 pF TYP. +0.15 0.50-0.15 MAX. (VGS = 4.5 V, ID = 15 A) 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 36 140 29 1.