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2SK3668 - MOS Field Effect Transistor

Key Features

  • Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) +0.2 8.7-0.2 Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Surface mount package available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperatur.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3668 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) +0.2 8.7-0.2 Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Surface mount package available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 400 30 10 34 1.