2SK596
2SK596 is N-Channel Junction Silicon FET manufactured by Kexin Semiconductor.
Features
ƽ Excellent Voltage characteristic. ƽ Excellent transient characteristic. ƽ Adoption of FBET process.
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
Unit : mm 0.1 +0.05
-0.01
+0.1 0.97 -0.1
Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted)
Parameter Gate to Drain voltage Gate current Drain current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol VDS IG ID PD TJ Tstg
Value -20 10 1 100 150
-55 to 150
Ƶ Electrical Characteristics (TA = 25ć unless otherwise noted)
Parameter Gate to Drain Breakdown Voltage Cutoff Voltage Zero Gate Voltage Drain Current Forward Transconductance Input Capacitance Output Capacitance Voltage Gain Reduced Voltage characteristic Frequency characteristic Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage
Symbol VGD0 VGS(off) IDSS |Yfs| CISS COSS GV ƸGV ƸGVF Zin Zo THD VNO
Test Conditions IG=-100ȝA VDS=5V,ID=1ȝA VDS=5V, VGS=0V VDS=5V, VGS=0, f=1.0MHz
VDS=5V,VGS=0V,f=1.0MHz
Vin=10m V, f=1k Hz Vin=10m V,f=1k Hz Vcc=4.5V to1.5V f=1k Hz to 110Hz f=1k Hz f=1k Hz Vin=30m V,f=1k Hz Vin=0
Ƶ Classification of IDSS (μA)
A 100-170
B 150-240
C 210-350 Marking: J35
D 320-480
E 440-800
0-0.1 +0.1 0.38
-0.1
1. Drain 2. Source 3. Gate
Unit V m A m W ć
Min Typ Max Unit
-20 V
-0.6...
