ƽ Excellent Voltage characteristic. ƽ Excellent transient characteristic. ƽ Adoption of FBET process. +0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
0.55
0.4
Unit : mm 0.1 +0.05
-0.01
+0.1 0.97 -0.1
Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted)
Parameter Gate to Drain voltage Gate current Drain current Total Power Dissipation Junction Temperature Storage Temperature Range
Symbol VDS IG ID PD TJ Tstg
Value -20 10 1 10.
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SMD Type
JFET
N-Channel Junction Silicon FET 2SK596
Ƶ Features
ƽ Excellent Voltage characteristic. ƽ Excellent transient characteristic. ƽ Adoption of FBET process.
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
0.55
0.4
Unit : mm 0.1 +0.05
-0.01
+0.1 0.97 -0.
2SK596 Datasheet
