Kexin Electronics 2SK596
N-Channel Junction Silicon FET
| Part No. | 2SK596 |
|---|---|
| Datasheet | 2SK596 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Junction Silicon FET |
| Buy | Stock & Price |
FEATURES
ƽ Excellent Voltage characteristic. ƽ Excellent transient characteristic. ƽ Adoption of FBET process. +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit : mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 ƵABSOLUTE MAXIMUM RATINGS
(TA = 25ć unless otherwise noted) Parameter Gate to Drain voltage Gate current Drain current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS IG ID PD TJ Tstg Value -20 10 1 100 150 -55 to 150 ƵELECTRICAL CHARACTERISTICS
(TA = 25ć unless otherwise noted) Parameter Gate to Drain Breakdown Voltage Cutoff Voltage Zero Gate Voltage Drain Current Forward Transconductance Input Capacitance Output Capacitance Voltage Gain Reduced Voltage characteristic Frequency characteristic Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage Symbol VGD0 VGS(off) IDSS |Yfs| CISS COSS GV ƸGV ƸGVF Zin Zo THD VNO Test Conditions IG=-100ȝA VDS=5V,ID=1ȝA VDS=5V, VGS=0V...
