Datasheet4U Logo Datasheet4U.com

5N20V - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • s.
  • RDS(ON)≤40mΩ @VGS=4.5V.
  • RDS(ON)≤45mΩ @VGS=2.7V D1 S1 S1 D1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 D2 4 : Gate1 S2 5 : Gate2 6 : Source2 S2 7 : Source2 G2 8 : Drain2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain-Current -Continuous ID -Pulsed (NOTE 1) IDM Power Dissipation (NOTE 2) PD Thermal Resistance,Junction- to-Ambient RθJA Operating Junction and Storage Temperature Ra.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
5N20V GE5N20V Gemos
5N20V N-channel Power MOSFET STMicroelectronics
5N20A MOSFET GOFORD
5N25 3.8A 250V LOGIC N-CHANNEL MOSFET UNISONIC TECHNOLOGIES
5N25Z 3.8A 250V LOGIC N-CHANNEL MOSFET UNISONIC TECHNOLOGIES

Other Datasheets by Kexin Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors Dual N-Channel Enhancement Mode MOSFET 5N20V ■ Features ● RDS(ON)≤40mΩ @VGS=4.5V ● RDS(ON)≤45mΩ @VGS=2.7V D1 S1 S1 D1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 D2 4 : Gate1 S2 5 : Gate2 6 : Source2 S2 7 : Source2 G2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain-Current -Continuous ID -Pulsed (NOTE 1) IDM Power Dissipation (NOTE 2) PD Thermal Resistance,Junction- to-Ambient RθJA Operating Junction and Storage Temperature Range Tj.Tstg Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. When Mounted on minimum recommended footprint. Rating 20 ±12 5 20 1.5 83 -55 to 150 Unit V V A A W ℃/W ℃ 1 www.kexin.com.