A1608 Datasheet | Kexin Semiconductor

Features High f T: f T=400MHz. PNP Silicon Epitaxia 2SA1608 Transist Io Crs Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V m A m W 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain - Collector-emitter saturation voltage - Base-emitter saturation voltage - Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time - . PW 350ìs,duty cycle 2% h FE Classification Marking h FE Y12 75 150 Y13 100 200 Symbol Testconditons ICBO VCB = -40V, IE=0 IEBO VEB = -4V, IC=0 h FE VCE = -2V , IC = -150m A VCE(sat) IC = -500m A , IB = -50m A VBE(sat) IC = -500m A , IB = -50m A f T VCE = -10V , IE = 20m A Cob VCB = -10V , IE = 0 , f = 1.0MHz ton VCC = -30V , tstg IC = 150m A , toff IB1 = -IB2 = 15m A Y14 150 300 Min Typ Max Unit -100 n...