Kexin Electronics A19T
P-Channel MOSFET
| Part No. | A19T |
|---|---|
| Datasheet | A19T Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-12V● ID =-2.8 A
● RDS(ON) ＜ 115mΩ (VGS =-4.5V)
● RDS(ON) ＜ 160mΩ (VGS =-2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -12 ±10 -2.8 1.2 150 -55 to 150 Unit V A W ℃ 0-0.1 +0.10.38 -0.1 1.Gate 2.Source 3.Drain●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Test Conditions ID=-250μA, VGS=0V VDS=-12V, VGS=0V,Tj = 25℃ VDS=0V, VGS=±10V VDS=VGS ID=-250μA VGS=-4.5V, ID=-1A VGS=-2.5V, ID=-0.5A Min Typ Max Unit -12 -18 V 1 μA ±100 nA -0.45 -1.1 V 115 mΩ 160● Marking Mar...