Kexin Electronics AO3407
P-Channel MOSFET
| Part No. | AO3407 |
|---|---|
| Datasheet | AO3407 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
+0.1 2.9 -0.1 +0.1 0.4 -0.1 3 +0.05 0.1 -0.01 +0.1 0.97 -0.1 1.Base 1. Gate 2.Emitter 2. Source S +0.1 0.38 -0.1 0-0.1 G 3. Drain 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range t ≤10s Steady State Ta = 25℃ Ta = 70℃ Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.1 -3.5 -20 1.4 1 90 125 60 150 -55 to 150 ℃ ℃/W W A Unit V 1 SMD Type P-Channel Enhancement MOSFET MOSFET IC AO3407 (KO3407) Test Conditions ID=-250μA, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V VDS=VGS ID=-250μA VGS=-10V, ID=-4.1A VGS=-10V, ID=-4.A VGS=-4.5V, ID=-3A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-4A VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A TJ=125℃ -10 5.5 8.2 700 120 75 10 14.3 7 3.1 8.6 VGS=-10...
