Kexin Electronics AO3415
P-Channel MOSFET
FEATURES
● VDS (V) =-20V● ID =-5 A (VGS =-4.5V)
● RDS(ON) < 43mΩ (VGS =-4.5V)
● RDS(ON) < 55mΩ (VGS =-2.5V)
● RDS(ON) < 75mΩ (VGS =-1.8V)
● RDS(ON) < 100mΩ (VGS =-1.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 G S 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Junction Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -20 ±8 -5 -4 -30 1.5 1 80 100 52 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET AO3415 (KO3415)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate...