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AO3435 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-3.5 A (VGS =-4.5V).
  • RDS(ON) < 70mΩ (VGS =-4.5V).
  • RDS(ON) < 90mΩ (VGS =-2.5V).
  • RDS(ON) < 110mΩ (VGS =-1.8V).
  • RDS(ON) < 130mΩ (VGS =-1.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage.

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SMD Type P-Channel MOSFET AO3435 (KO3435) MOSFET ■ Features ● VDS (V) =-20V ● ID =-3.5 A (VGS =-4.5V) ● RDS(ON) < 70mΩ (VGS =-4.5V) ● RDS(ON) < 90mΩ (VGS =-2.5V) ● RDS(ON) < 110mΩ (VGS =-1.8V) ● RDS(ON) < 130mΩ (VGS =-1.5V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation TA=25°C TA=70°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.