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AO3460 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 0.65 A (VGS = 10V).
  • RDS(ON) ＜ 1.7Ω (VGS = 10V).
  • RDS(ON) ＜ 2Ω (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 1. Gate D 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Th.

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SMD Type N-Channel MOSFET AO3460 (KO3460) MOSFET ■ Features ● VDS (V) = 60V ● ID = 0.65 A (VGS = 10V) ● RDS(ON) ＜ 1.7Ω (VGS = 10V) ● RDS(ON) ＜ 2Ω (VGS = 4.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 1. Gate D 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating 60 ±20 0.65 0.5 1.6 1.4 0.