Kexin Electronics AO4286
N-Channel MOSFET
FEATURES
● VDS (V) = 100V● ID = 4 A (VGS = 10V)
● RDS(ON) < 68mΩ (VGS = 10V)
● RDS(ON) < 92mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJL TJ Tstg Rating 100 ±20 4 3 25 4 0.8 2.5 1.6 50 85 30 150 -55 to 150 Unit V A mJ W ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET AO4286 (KO4286)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=250 uA, VGS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS IGSS VDS=100V, VGS=0V VDS=100V, VGS=0V, T...