AO4466 Datasheet | Kexin Semiconductor

Features - VDS (V) = 30V - ID = 9.4 A (VGS = 10V) - RDS(ON) ＜ 23mΩ (VGS = 10V) - RDS(ON) ＜ 35mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD Rth JA Rth JL TJ Tstg Rating 30 ±20 9.4 7.7 50 3.1 2.1 40 75 24 150 -55 to 150 Unit V A W ℃/W ℃ .kexin..cn 1 SMD Type MOSFET N-Channel MOSFET AO4466 (KO4466) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol...