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AO4622 - Complementary Trench MOSFET

Key Features

  • s.
  • N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON) ＜ 23mΩ (VGS = 10V) RDS(ON) ＜ 30mΩ (VGS = 4.5V) RDS(ON) ＜ 84mΩ (VGS = 2.5V).
  • P-Channel : VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) ＜ 53mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V) D1 D2 SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 G1 G2 S1 N-channel S2 P-channel.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current.

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SMD Type Complementary Trench MOSFET AO4622 (KO4622) MOSFET ■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON) ＜ 23mΩ (VGS = 10V) RDS(ON) ＜ 30mΩ (VGS = 4.5V) RDS(ON) ＜ 84mΩ (VGS = 2.5V) ● P-Channel : VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) ＜ 53mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V) D1 D2 SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 G1 G2 S1 N-channel S2 P-channel ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.