Download AO4622 Datasheet PDF
Kexin Semiconductor
AO4622
AO4622 is Complementary Trench MOSFET manufactured by Kexin Semiconductor.
Features - N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 84mΩ (VGS = 2.5V) - P-Channel : VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) < 53mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) D1 D2 SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S1 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1 8 D1 G1 G2 S1 N-channel S2 P-channel - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1m H TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS IDM IAR EAR Rth JA Rth JL TJ Tstg N-Channel P-Channel 20 -20 ±16 ±12 7.3 -5 6.2 -4.2 35 -25 13 -13 25...