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AO4892 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 4A (VGS = 10V).
  • RDS(ON) ＜ 68mΩ (VGS = 10V).
  • RDS(ON) ＜ 94mΩ (VGS = 4.5V) +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Avalanche Energy L=0.1mH Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resi.

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SMD Type Dual N-Channel MOSFET AO4892 (KO4892) SOP-8 ■ Features ● VDS (V) = 100V ● ID = 4A (VGS = 10V) ● RDS(ON) ＜ 68mΩ (VGS = 10V) ● RDS(ON) ＜ 94mΩ (VGS = 4.5V) +0.04 0.21 -0.02 D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Avalanche Energy L=0.1mH Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJL TJ Tstg Rating 100 ±20 4 3 25 4 0..8 2 1.3 62.5 90 40 150 -55 to 150 Unit V A mJ W ℃/W ℃ www.