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AOD413 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-40V.
  • ID =-12 A (VGS =-10V).
  • RDS(ON) ＜ 45mΩ (VGS =-10V).
  • RDS(ON) ＜ 69mΩ (VGS =-4.5V) D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Sourc.

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SMD Type P-Channel MOSFET AOD413 (KOD413) MOSFET ■ Features ● VDS (V) =-40V ● ID =-12 A (VGS =-10V) ● RDS(ON) ＜ 45mΩ (VGS =-10V) ● RDS(ON) ＜ 69mΩ (VGS =-4.5V) D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Ta = 25℃ Ta = 100℃ Repetitive avalanche energy Power Dissipation Power Dissipation L=0.1mH Tc=25°C Tc=100°C Ta=25°C Ta=100°C Thermal Resistance.