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APM2701CG - Dual-Channel MOSFET

Key Features

  • N-Channel VDS=20V ID=3A RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) P-C hannel VDS=-20V ID=-1.5A RDS(ON) 190m (VGS =-4.5V) RDS(ON) 235m (VGS =-2.5V) ( SOT-23-6 ) D1 S1 D2 G1 S2 G2 D1 S2 G1 S1 n-channel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25 TA =10 0 Diode Continuous Forward Current Thermal Resistance. Junction- to-Ambient Junction and Storage Temperature Range G2.

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SMD Type Dual Enhancement Mode MOSFET APM2701CG MOSFET Features N-Channel VDS=20V ID=3A RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) P-C hannel VDS=-20V ID=-1.5A RDS(ON) 190m (VGS =-4.5V) RDS(ON) 235m (VGS =-2.5V) ( SOT-23-6 ) D1 S1 D2 G1 S2 G2 D1 S2 G1 S1 n-channel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25 TA =10 0 Diode Continuous Forward Current Thermal Resistance.Junction- to-Ambient Junction and Storage Temperature Range G2 D2 p-channel Sy mb ol VD S VG S ID I DM PD IS RthJA TJ , TSTG N-Channel P-Channel 20 -20 10 10 3 -1.5 10 -6 0. 83 0 .3 1 -1 150 -55 to 150 U nit V A W A /W Unit: mm www.kexin.com.