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APM4015PU - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-40V S.
  • ID =-45 A (VGS =-10V).
  • RDS(ON) ＜ 13mΩ (VGS =-10V).
  • RDS(ON) ＜ 19mΩ (VGS =-4.5V) G D + 9.70 0.2 - 0.2 TO-252 6.5 0 +0.15 -0.15 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 1.50 .15 -0.15 3.80 +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 - 0.1 0.80 +0.1 -0.1 0.127 max 2.3 4.60 + 0.15 - 0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 - 0.1 1 Gate 2 Drain 3 Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Sour.

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SMD Type P-Channel Enhancement MOSFET APM4015PU MOSFET ■ Features ● VDS (V) =-40V S ● ID =-45 A (VGS =-10V) ● RDS(ON) ＜ 13mΩ (VGS =-10V) ● RDS(ON) ＜ 19mΩ (VGS =-4.5V) G D + 9.70 0.2 - 0.2 TO-252 6.5 0 +0.15 -0.15 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +0 1.50 .15 -0.15 3.80 +0 5.55 .15 -0.15 + 0.50 0.15 -0.15 + 1.50 0.28 - 0.1 0.80 +0.1 -0.1 0.127 max 2.3 4.60 + 0.15 - 0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 - 0.1 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Tc = 25℃ Tc = 100℃ Pulsed Drain Current (Note.1) Tc = 25℃ Tc = 100℃ Power Dissipation (Note.1) Tc = 25℃ Tc = 100℃ Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.