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BA779S Datasheet PDF

Kexin Electronics BA779S

Silicon PIN Diodes

Part No. BA779S
Datasheet BA779S Download
Manufacturer Kexin Electronics
Description Silicon PIN Diodes
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BA779S datasheet page 1 preview

FEATURES

Wide frequency range 10 MHz to 1 GHz +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.1 0.97 -0.1

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Reverse Voltage Forward Current Junction Temperature Storage temperature range Junction ambient Symbol Test Conditions Value Unit VR 30 V IF 50 mA Tj 125 Tstg -55 to +125 RthJA on PC board 50mm 50mm 1.6mm 500 K/W 0-0.1 +0.1 0.38 -0.1 1.Base 2.Emitter 3.collector

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 20 mA 1 V Reverse Current IR VR = 30 V 50 nA Diode capacitance CD f = 100 MHz, VR = 0 0.5 pF Differential forward resistance rf f = 100 MHz, IF = 1.5 mA 50 BA799 5 Reverse impedance zr f = 100 MHz, VR = 0 K BA799S 9 Minority carrier lifetime ô IF = 10 mA, IR = 10 mA 4 S 1