BAP50-04
Features
- Low diode capacitance.
- Low diode forward resistance.
+0.1 2.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
0.95+0.1 -0.1 1.9+0.1 -0.1
+0.1 1.3 -0.1
Unit: mm 0.1+0.05
-0.01
+0.1 0.97 -0.1
0-0.1 +0.1 0.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter Continuous reverse voltage Continuous forward current Total power dissipation TS = 90℃ Storage temperature Junction temperature Thermal resistance from junction to soldering point
Symbol VR IF Ptot Tstg Tj
Rth j-s
Rating 50 50 250
-65 to +150 150 220
Unit V m A m W ℃ ℃ ℃/W
- Electrical Characteristics Ta = 25℃
Parameter Forward voltage Reverse voltage Reverse current
Diode capacitance
Symbol VF VR IR
Cd
Diode forward resistance r D
- Marking
Marking
4P
Test conditons IF = 50 m A IR = 10 μA VR = 50 V
VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz IF = 0.5 m A; f = 100 MHz IF = 1 m A; f = 100 MHz IF = 10 m A; f = 100...
