BAP63-02
Features
High speed switching for RF signals Low diode capacitance Low diode forward resistance Very low series inductance. For applications up to 3 GHz.
+0.05 0.8 -0.05
SOD-523
1.2+0.1 -0.1
+
+0.05 0.3 -0.05
Unit: mm 0.6+0.1
-0.1
- 1.6+0.1 -0.1
0.77max
+0.05 0.1 -0.02
0.07max
Absolute M axim um R atings T a = 25
Param eter
Sym bol
M in continuous reverse voltage
VR continuous forward current
IF total power dissipation
TS 90
P tot storage tem perature
T stg
-65 junction tem perature
Tj
-65 therm al resistance from junction to soldering point
R th j-s
Max 50 100 715 +150 +150 85
U n it V m A m W
K /W
.kexin..cn 1
SMD Type
Diodes
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
Unit forward...
