Kexin Electronics BAP65-05
Silicon PIN diode
FEATURES
Two elements in common cathode configuration High voltage, current controlled RF resistor for RF switches Low diode capacitance Low diode forward resistance (low loss). A bsolute M axim um R atings T a = 25 Param eter continuous reverse voltage continuous forward current total power dissipation Ts 90 storage tem perature junction tem perature therm al resistance from junction to soldering point Sym bol VR IF P tot T stg Tj R th j-s SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.1 2.4 -0.1 M in Max 30 100 250 -65 +150 -65 +150 220 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector U nit V mA mW K /W 1 SMD Type BAP65-05 DiodesELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage VF IF = 50 mA 0.95 1.1 V reverse leakage current VR VR = 20 V 20 nA VR = 0; f = 1 MHz 0.7 diode capacitance VR = 1 V; f = 1 MHz 0.575 0.9 Cd pF VR = 3 V; f = 1 MHz 0.525 0.8 VR = 20 V...