BAP70-03 Datasheet PDF

FEATURES

High voltage, current controlled RF resistor forattenuators Low diode capacitance Very low series inductance. SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.05 0.1 -0.02

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 50 V continuous forward current IF 100 mA total power dissipation Ts = 90 Ptot 500 mW storage temperature Tstg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point Rth j-s 120 K/W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter forward voltage reverse leakage current diode capacitance diode forward resistance charge carrier life time series inductance Symbol Conditions Typ Max Unit VF IF = 50 mA 0.95 1.1 V IR VR = 30 V 20 nA VR = 0; f = 1 MHz 570 VR = 1 V; f = 1 MHz 400 Cd fF VR = 5 V; f = 1 MHz 270 VR = 20V; f = 1 MHz 200 250 IF = 0.5 mA; f = 100 MHz 77 100 IF = 1 mA; f = 100 MHz 40 50 rD IF = 10 mA; f = 100 MHz 5.4 7 IF = 100 mA; f = 100 MHz 1.4 1.9 when switched from IF = 10 mA to IR = 6 mA; L 1.25 ìs RL = 100 ;measured at IR = 3 mA LS IF = 100 mA; f = 100 MHz 1.