Kexin Electronics BAR99
Silicon Switching Diode
FEATURES
For high-speed switching +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Peak reverse volatge Forward current Surege forward current, T = 1 s Total power dissipation, Ts = 54 Junction tem perature Storage tem perature range Junction am bient (Note 1) Junction soldering point Note 1. Package m ounted on epoxy pcb 40 m m Sym bol VR VRM IF IFS P tot Tj T stg R th JA R th JS V a lu e 70 70 250 4.5 370 150 -65 to +150 330 260 40 m m 1.5 m m /6 cm 2 Cu. U n it V V mA A mW K/W K/W 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector 1 SMD Type Silicon Switching Diode BAR99 DiodesELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown voltage Symbol VR Forward voltage VF Reverse current IR Diode capacitance CD Reverse recovery time trr Conditions IR =100 A IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 70 V VR = 25 V,TA = 150 VR = 7...