BAS28W Datasheet | Kexin Semiconductor

Features For high-speed switching applications Electrical insulated diodes SOT-343 Unit: mm Absolute M axim um R atings T a = 25 Param eter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 103 Junction tem perature Storage tem perature range Junction - am bient 1) Junction - soldering point N o te 1.Package m ounted on epoxy pcb 40m m 40m m Sym bol VR VRM IF IFS P tot Tj T stg R th JA R th JS V a lu e 75 85 200 4.5 250 150 -55 to + 150 460 190 1.5m m / 0.5cm 2 Cu U n it V V m A A m W K /W K /W .kexin..cn 1 SMD Type Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol I(BR) IF IR CD trr Test Condition VR = 40 V IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A VR = 75 V VR = 25 V, TA = 150 VR = 75 V, TA = 150 f = 1 MHz; VR = 0 IF = 10 m A, IR = 10 m A, RL = 100 measured at IR = 1m...