Kexin Electronics BAT254
Schottky barrier diode
FEATURES
Low forward voltage Guard ring protoected Very small ceramic SMD package. SOD110 Unit: mm cathode idenfifierABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forwrad current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Conditions tp 1s; ä 0.5 tp < 1s Min Max Unit 30 V 200 mA 300 mA 600 mA -65 +150 125 -65 +125 1 SMD Type Schottky barrier diode BAT254 DiodesELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol Conditions Max Unit IF = 0.1 mA 240 IF = 1 mA 320 forward voltage VF IF = 10 mA 400 mV IF = 30 mA 500 IF = 100 mA 800 reverse current IR VR = 25 V, note 1 2 A when switched from IF = 10 mA to reverse recovery time trr IR = 10 mA; RL = 100 5 ns measured at IR = 1 mA diode capacitance Cd f = 1 MHz; VR = 1 V; 10 pF thermal resistance from junction to ambient Rth j-a note 2 315 K/W Note 1.Pulsed test: tp = 300 s, ä = 0.02.