Kexin Electronics BAT68
Silicon Schottky Diode
FEATURES
For mixer applications in VHF/UHF range For high-speed switching application +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 A bsolute M axim um R atings T a = 25 P aram eter Sym bol V alue U nit D iode reverse voltage VR 8 V Forward current IF 130 mA Total pow er dissipation BAT68, TS 77 B A T68-04, B A T68-06,TS 61 P tot 150 mW B A T68-05,TS 46 Junction tem perature Tj 150 S torage tem perature T stg -55 to +150 Junction - soldering point(N ote 1) BAT68 BAT68-04, BAT68-06 R thJS 490 K /W 590 B A T 6 8 -0 5 690 N ote 1.F or calculation of R thJA please refer to A pplication N ote T herm al R esistance 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector 1 SMD Type BAT68;BAT68-04 BAT68-05;BAT68-06 DiodesELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown voltage Symbol V(BR) Reverse current IR Forward voltage VF Diode capacitance CT Differential forward resistance RF Conditions I(BR)...