BAT754C Datasheet PDF

FEATURES

Ultra high switching speed Guard ring protected Small plastic SMD package Low diode capacitance. +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol Conditions Min VR IF IFRM tp < 1 s;ä < 0.5 IFSM tp = 8.3 ms half sinewave;JEDEC method Tstg -65 Tj Tamb -65 Max 30 200 300 600 +150 125 +125 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Unit V mA mA mA Electrical C haracteristics Ta = 25 Param eter Sym bol Forward voltage VF Reverse current Diode capacitance N o te 1. Pulse test: tp < 300 s; ä IR Cd 0.02. C o n d itio n s IF = 0.1 m A IF = 1 m A IF = 10 m A IF = 30 m A IF = 100 m A VR = 25 V; Note 1 f = 1 MHz; VR = 1 V M in Max U n it 200 mV 260 mV...