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BC859W - PNP General Purpose Transistor

Key Features

  • Low current (max. 100 mA). Low voltage (max. 45 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC859W BC860W -30 -50 -30 -45 -5 -100 -200 -200 200 150 -65 to +150 -65 to.

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SMD Type TransistIoCrs PNP General Purpose Transistor BC859W,BC860W Features Low current (max. 100 mA). Low voltage (max. 45 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC859W BC860W -30 -50 -30 -45 -5 -100 -200 -200 200 150 -65 to +150 -65 to +150 625 Unit V V V mA mA mA mW K/W 1 Emitter 2 Base 3 Collector www.kexin.com.