Kexin Electronics BC860W
PNP General Purpose Transistor
FEATURES
Low current (max. 100 mA) Low voltage (max. 45 V). Transistors 1 Emitter 2 Base 3 CollectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak collector current Peak base current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM PD R JA Rating -50 -45 -5 -100 -200 -200 200 625 -65 to +150 Unit V V V mA mA mA mW K/W TJ, Tstg 1 SMD Type KC860W(BC860W)ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-Cutoff Current Emitter- cutoff current KC860W DC Current Gain KC860BW KC860CW Collector-Emitter Saturation Voltage VCE(sat) IC = -10 mA, IB =- 0.5 mA IC = -100 mA, IB =- 5.0 mA Base-Emitter Voltage Collector capacitance Emitter capacitance VBE Cc Ce IC = -2mA, IB=-5A IC = -10 mA, IB=-5A IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -200 A; VCE = -5 V; RS = 2 k 10 Hz to 1...