BFU590Q Description
SMD Type TTrraannssiissttoorrss NPN Wideband Silicon RF Transistor BFU590Q.
BFU590Q Key Features
- Medium power, high linearity, high breakdown voltage RF transistor
- Maximum stable gain 11 dB at 900 MHz
- PL(1dB) 22 dBm at 900 MHz
- 8GHz fT silicon technology