BFU590Q
Features
- Medium power, high linearity, high breakdown voltage RF transistor
- Maximum stable gain 11 d B at 900 MHz
- PL(1d B) 22 d Bm at 900 MHz
- 8GHz f T silicon technology
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
- Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Rating
Collector
- Base Voltage
VCBO
Collector
- Emitter Voltage open base
VCEO
Collector
- Emitter Voltage shorted base
VCES
Emitter
- Base Voltage
VEBO
Collector Current
- Continuous
Total power dissipation TS≤ 85 °C
- 1
Ptot
Electrostatic discharge voltage
Human Body Model (HBM) According to JEDEC standard 22-A114E
VESD
±250...
