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BSS84W - P-channel MOSFET

Key Features

  • s.
  • VDS (V) = -50V.
  • ID = -130mA.
  • RDS(on)max = 10Ω @ VGS =-5V.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed S G D MOSFET 1.Gate 2.Source 3.Drain.
  • Absolute Maximum Ratings (TA = 25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance, Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS.

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SMD Type P-channel MOSFET BSS84W ■ Features ● VDS (V) = -50V ● ID = -130mA ● RDS(on)max = 10Ω @ VGS =-5V ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed S G D MOSFET 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings (TA = 25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance, Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID PD RᶿJA TJ TST G Note 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rating -50 ±20 -130 300 417 150 -55 to 150 Unit V mA mW ℃/W ℃ www.kexin.com.