CXT2907A Datasheet | Kexin Semiconductor

Features High current (max.600m A) Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Power dissipation Junction temperature Storage temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD Tj Tstg èJA Rating -60 -60 -5 -600 1.2 150 -65 to +150 104 Unit V V V m A W /W .kexin..cn 1 SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Collector-base cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Turn-on time Delay time Rise time Turn-off time Storage time Fall time Transition frequency Symbol Testconditons ICBO IE = 0; VCB = -50 V IE = 0; VCB = -50 V; Tj = 125 IEBO IC = 0; VEB = -5 V IC = -0.1 m A; VCE = -10 V IC = -1 m A; VCE = -10 V h FE IC = -10 m A; VCE = -10 V IC = -150 m A; VCE = -10 V IC = -500 m A; VCE = -10 V IC = -150 m A; IB =-15m A VCEsat IC = -500 m A; IB = -50 m A VBEsat ton td tr toff ts tf IC = -150 m A; IB = -15 m A IC = -500 m A; IB = -50 m A VCC=30V, VBE= -0.5V,IC=-150m A, IB1 =-15m A VCC=-6.0V,I C=-150m A, IB1=IB2 =-15m A f T IC = -50 m A; VCE = -20 V; f = 100 MHz Min Typ Max Unit -10 n A -10 -50 n...