DCP55-16-13
Features
Epitaxial Planar Die Construction plementary PNP Type Available (DCP52) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7.00+0.3 -0.3
0.70+0.1 -0.1
1 base 2 collector 3 emitter
Absolute Maximum Ratings Ta = 25
P ara me ter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current (t P < 5ms) power dissipation thermal resistance from junction to ambient junction temperature storage temperature
Sy m bol VCB O VCE O V EBO IC ICM PD RθJA Tj
T stg
R ati ng 60 60 5 1 1.5 1 1 25 1 50
-55 to +150
Unit V V V A A W /W
Electrical Characteristics Ta = 25
P aram eter Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-Emitter...
