DTS2315
DTS2315 is P-Channel Enhancement MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-20V
- ID =-3.85A (VGS =-4.5V)
- RDS(ON) ＜48mΩ (VGS =-4.5V)
- RDS(ON) ＜ 65mΩ (VGS =-2.5V)
- RDS(ON) ＜ 100mΩ (VGS =-1.8V)
G1
S2
3D
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
MOSFET
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.1 0.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
- 1 Ta = 25℃
Ta = 70℃
Pulsed Drain Current
- 1
Power Dissipation
- 1
Ta = 25℃
Ta =...
