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DTS2315 - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-3.85A (VGS =-4.5V).
  • RDS(ON) ＜48mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 65mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 100mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.

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SMD Type P-Channel Enhancement MOSFET DTS2315 ■ Features ● VDS (V) =-20V ● ID =-3.85A (VGS =-4.5V) ● RDS(ON) ＜48mΩ (VGS =-4.5V) ● RDS(ON) ＜ 65mΩ (VGS =-2.5V) ● RDS(ON) ＜ 100mΩ (VGS =-1.8V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current *1 Power Dissipation *1 Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range *1Surface Mounted on FR4 board.