Kexin Electronics FCX1053A
NPN Silicon Power Switching Transistor
FEATURES
2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE(sat) 78mÙ at 4.5A.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Symbol Rating Unit VCBO 150 V VCEO 75 V VEBO 5 V ICM 10 A Peak pulse current Power dissipation Operating and storage temperature range IC 3 A Ptot 1 W Tj,Tstg -55 to +150 1 SMD TypeELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Static Forward Current Transfer Ratio * Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02.