Download FCX1151A Datasheet PDF
Kexin Semiconductor
FCX1151A
Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE(sat) 66mÙ at 3A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Symbol Rating Unit VCBO -45 VCEO -40 VEBO -5 -5 Peak pulse current - 3 -3 Base current Power dissipation Operating and storage temperature range -500 m A - 1 Ptot - 2 Tj,Tstg -55 to +150 - 1 remended Ptot calculated using FR4 measuring 15X15X0.6mm - 2 Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40X40X0.6mm - 3 Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% .kexin..cn...