Kexin Electronics FCX619
NPN Silicon Power Switching Transistor
FEATURES
2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE(sat) 87mÙ at 2.75A.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Symbol Rating Unit VCBO 50 V VCEO 50 V VEBO 5 V ICM 6 A IC 3.0 A Base current Power dissipation Operating and storage temperature range IB 500 mA Ptot 1.5 W Tj,Tstg -55 to +150 1 SMD TypeELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Collector Emitter Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * DC current gain * Transitional frequency Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02.