Kexin Electronics FCX790A
PNP Silicon Power Switching Transistor
FEATURES
2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating -50 -40 -5 -6 -2 1 -55 to +150 Unit V V V A A W 1 Free Datasheet SMD Type FCX790AELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector-base cut-off current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter ON voltage * Symbol V(BR)CBO IC=-100ìA V(BR)CEO IC=-10mA V(BR)EBO IE=-100ìA ICBO IEBO VCB=-10V VEB=-4V Testconditons Transistors Min -50 -40 -5 Typ Max Unit V V V 0.1 0.1 -250 -350 -450 -0.9 -0.8 300 250 200 150 100 225 24 35 600 800 ìA ìA mV V V IC=-0.