Kexin Electronics FDC3612
N-Channel MOSFET
FEATURES
● VDS (V) = 100V● ID = 2.6 A (VGS = 10V)
● RDS(ON) < 125mΩ (VGS = 10V)
● RDS(ON) < 135mΩ (VGS = 6V)
● Fast switching speed 1 6 2 5 3 4 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1.Drain 4.Source 2.Drain 5.Drain 3.Gate 6.Drain
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Drain-Source Avalanche Current Power Dissipation (Note.1) (Note.2) Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD RθJA RθJC TJ Tstg Rating 100 ±20 2.6 20 2.6 1.6 0.8 78 30 150 -55 to 150 Note.1: 78°C/W when mounted on a 1in 2 pad of 2oz copper on FR-4 board. Note.2: 156°C/W when mounted on a minimum pad. Unit V A W °C/W ℃ 1 SMD Type MOSFET N-Channel MOSFET FDC3612 (KDC3612)● Electrical Char...