Kexin Electronics FDN327N
N-Channel MOSFET
FEATURES
● VDS (V) = 20V● ID = 2 A
● RDS(ON) < 70mΩ (VGS = 4.5V)
● RDS(ON) < 80mΩ (VGS = 2.5V)
● RDS(ON) < 120mΩ (VGS = 1.8V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 1. Gate D 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.1 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. Note.2 270°C/W when mounted on aminimum pad. Rating 20 ±8 2 8 0.5 0.46 250 75 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type N-Channel MOSFET FDN327N (KDN327N)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate...