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FDT86102LZ - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 100V ƽ ID = 6.6 A (VGS = ±20V) ƽ RDS(ON) ˘ 28m¡ (VGS = 10V) ƽ RDS(ON) ˘ 38m¡ (VGS = 4.5V) N-Channel MOSFET FDT86102LZ SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 1 2 3 0.75 (min) 10b MOSFET Unit:mm 1.6 ± 0.1 1.80 (max) 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power.

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SMD Type Ƶ Features ƽ VDS (V) = 100V ƽ ID = 6.6 A (VGS = ±20V) ƽ RDS(ON) ˘ 28m¡ (VGS = 10V) ƽ RDS(ON) ˘ 38m¡ (VGS = 4.5V) N-Channel MOSFET FDT86102LZ SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 1 2 3 0.75 (min) 10b MOSFET Unit:mm 1.6 ± 0.1 1.80 (max) 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1a TA=25ć Power Dissipation 1b TA=25ć Single Pulse Avalanche Energy 3 Thermal Resistance.Junction- to-Ambient 1a Thermal Resistance.