FDT86102LZ Datasheet PDF

FEATURES

ƽ VDS (V) = 100V ƽ ID = 6.6 A (VGS = ±20V) ƽ RDS(ON) ˘ 28m¡ (VGS = 10V) ƽ RDS(ON) ˘ 38m¡ (VGS = 4.5V) N-Channel MOSFET FDT86102LZ SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 1 2 3 0.75 (min) 10b MOSFET Unit:mm 1.6 ± 0.1 1.80 (max) 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 Ƶ

ABSOLUTE MAXIMUM RATINGS

Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1a TA=25ć Power Dissipation 1b TA=25ć Single Pulse Avalanche Energy 3 Thermal Resistance.Junction- to-Ambient 1a Thermal Resistance.Junction- to-Case 1 Junction Temperature Storage Temperature Range Symbol VDS VGS ID PD EAS RthJA RthJC TJ Tstg Rating 100 ±20 6.6 40 2.2 1 84 55 12 150 -55 to +150 Unit V A W mJ ć/W ć 1 SMD Type MOSFET N-Channel MOSFET FDT86102LZ Ƶ

ELECTRICAL CHARACTERISTICS

Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gat...