FDT86102LZ
Features
ƽ VDS (V) = 100V ƽ ID = 6.6 A (VGS = ±20V) ƽ RDS(ON) ˘ 28m¡ (VGS = 10V) ƽ RDS(ON) ˘ 38m¡ (VGS = 4.5V)
N-Channel MOSFET FDT86102LZ
SOT-223
6.50±0.2 3.00±0.1
7.0±0.3 3.50±0.2
0.75 (min)
10b
MOSFET
Unit:mm
1.6 ± 0.1
1.80 (max)
2.30 (typ) 4.60 (typ)
0.84 (max) 0.66 (min)
0.250 Gauge Plane
1.Gate 2.Drain 3.Source 4.Drain
0.02 ~ 0.1
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation 1a
TA=25ć
Power Dissipation 1b
TA=25ć
Single Pulse Avalanche Energy 3
Thermal Resistance.Junction- to-Ambient 1a
Thermal Resistance.Junction- to-Case 1
Junction Temperature
Storage Temperature Range
Symbol VDS VGS
EAS Rth JA Rth...
