Kexin Electronics FMW4
Dual NPN Transistors
| Part No. | FMW4 |
|---|---|
| Datasheet | FMW4 Download |
| Manufacturer | Kexin Electronics |
| Description | Dual NPN Transistors |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage● Power dissipation: PC=300mW
● Collector Curren: IC=50mA 5 4 Unit: mm FMW4 1 2 3
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation(TOTAL) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5.0 50 300 150 -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Collector cutoff current DC current gain Collector-emitter saturation voltage Transition frequency● Marking Marking W4 Symbol Test conditions V(BR)CBO Ic= 50μA, IE=0 V(BR)CEO Ic= 1 mA， IB=0 V(BR)EBO IE= 50 μA， IC=0 IcBO VCB= 100 V , IE=0 IEBO VCE= 4.0V , IC=0 hFE VCE= 60V, IC= 2.0mA VCE(sat) IC=10 mA, IB= 1.0mA fT VCE= 12V, IC= 2mA,f=100MHz Unit V V V mA mW ℃ ℃ Min Typ Max Unit 120 V 120 V 5.0 V 0.5...