Kexin Electronics FTD2011
Dual N-Channel Enhancement Mode MOSFET
| Part No. | FTD2011 |
|---|---|
| Datasheet | FTD2011 Download |
| Manufacturer | Kexin Electronics |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(ON)=30mΩ Max. @VGS=4V● RDS(ON)=45mΩ Max. @VGS=2.5V D1 S1 S1 G1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 D2 7 : Source2 S2 8 : Drain2 S2 G2
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm2×0.8mm) Symbol VDS VGS ID IDM PD RθJA Tj.Tstg Rating 20 ±10 5 20 1.3 96 -55 to 150 Unit V V A A W ℃/W ℃ 1 SMD Type MOSFET Dual N-Channel Enhancement Mode MOSFET●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Cutoff Voltage Drain- Source on-state Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn...