Kexin Electronics FZT458
NPN Silicon Planar High Voltage Transistor
FEATURES
400 Volt VCEO +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 CollectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg Rating 400 400 5 300 1 200 2 -55 to +150 Unit V V V A A mA W +0.15 1.65-0.15 1 Datasheet pdf - SMD Type FZT458ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Currents Emitter Cut-Off Current Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) Base-Emitter Turn On Voltage VBE(on) IC=100ìA IC=10mA* IE=100ìA VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA* IC=50mA, IB=6mA* IC=50mA, IB=5mA* IC=50mA, VCE=10V* IC=1mA, VCE=10V Static Forward Current Transfer Ratio hFE IC=50mA, VCE=10V* IC=100mA,...