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HR1A3M - Digital Transistors

Key Features

  • Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Total Power Dissipation Junction temperature Storage temperature.
  • 1 PW 10ms, Duty Cycle 50%.
  • 2 When 0.7mm x 16cm2 ceramic board is used. Symbol VCBO VCEO VEBO IC(DC) IC(pulse).

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SMD Type Digital Transistors HR1A3M Transistors Features Up to 2A High Current Drives Such As IC Outputs and Actuators Available On-chip Bias Resistor Low Power Consumption During Drive Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Total Power Dissipation Junction temperature Storage temperature *1 PW 10ms, Duty Cycle 50% *2 When 0.7mm x 16cm2 ceramic board is used. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) *1 IB(DC) PT *2 Tj Tstg Rating -60 -60 -10 -1.0 -2.0 -0.02 2.