FEATURES
An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 max) +0.05 0.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.05 0.3 -0.05 Unit: mm 0.6+0.1 -0.1 - 1.6+0.1 -0.1 0.77max +0.05 0.1 -0.02 0.07max A bsolute M axim um R atings T a = 25 Param eter R everse voltage Forward current P ow er dissipation Junction tem perature Storage tem perature Sym bol VR IF Pd Tj T stg V alue 60 50 150 125 -55 to +125 U nit V mA mW ELECTRICAL CHARACTERISTICS
Ta = 25 P aram eter Reverse current Reverse voltage Capacitance Forward resistance ESD-Capability *1 Symbol Conditions Min Typ Max Unit IR VR = 60 V 100 nA VF IF = 2 mA 0.9 V C VR = 1 V, f = 1 MHz 0.45 pF rf IF = 10 mA, f = 100 MHz 1.8 C =200pF, Both forward and reverse direction 1 pulse 100 V Note 1. Failure criterion ; IR > 100 nA at VR = 60V. Marking Marking T5 1