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KBSS4350T - NPN Transistors

Features

  • s.
  • High collector current capability.
  • High collector current gain.
  • Improved efficiency due to reduced heat generation.
  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltag.

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SMD Type NPN Transistors PBSS4350T (KBSS4350T) Transistors ■ Features ● High collector current capability ● High collector current gain ● Improved efficiency due to reduced heat generation. ● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Repetitive Peak Collector Current (Note.1) Collector Current - Pulse Base Current (Note.2) Collector Power Dissipation (Note.3) (Note.4) (Note.
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