Kexin Electronics KBSS4350T
NPN Transistors
FEATURES
● High collector current capability● High collector current gain
● Improved efficiency due to reduced heat generation.
● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Repetitive Peak Collector Current (Note.1) Collector Current - Pulse Base Current (Note.2) Collector Power Dissipation (Note.3) (Note.4) (Note.1 and 2) (Note.2) (Note.3) Thermal Resistance Junction to Ambient (Note.4) (Note.1 and 2) Junction Temperature Operating Ambient Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC